| PART |
Description |
Maker |
| TH58NVG1S3AFT TH58NVG1S3AFT05 |
Flash - NAND
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| K9F6408U0A-TCB0 K9F6408U0A-TIB0 |
From old datasheet system
EEPROM,NAND FLASH,8MX8,CMOS,TSOP,44PIN,PLASTIC
8M x 8 Bit NAND Flash Memory
|
SAMSUNG[Samsung semiconductor]
Samsung Electronics Inc
|
| TC58NS256DC |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M ?8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM)
|
TOSHIBA[Toshiba Semiconductor]
|
| K9F1208Q0A-XXB0 K9F1208Q0B K9F1208Q0A-DIB0 K9F1208 |
64M x 8 bit NAND flash memory, 2.7 - 3.6V
512Mb/256Mb 1.8V NAND Flash Errata
64M x 8 bit NAND flash memory, 1.70 - 1.95V
32M x 16 bit NAND flash memory, 2.7 - 3.6V
32M x 16 bit NAND flash memory, 1.70 - 1.95V
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K9F1G08Q0M-PCB0 K9F1G08Q0M-PIB0 K9F1G08Q0M-YCB0 K9 |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
1Gb Gb 1.8V NAND Flash Errata
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| 2SK3397 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS)
|
TOSHIBA[Toshiba Semiconductor]
|
| TPC8113 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
|
Toshiba Semiconductor
|
| MP4203 |
TOSHIBA POWER MOS FET MODULE SILICON P CHANNEL MOS TYPE
|
Toshiba Semiconductor
|
| TPCA8046-H |
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H)
|
Toshiba Semiconductor
|
| TK40A10K3 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS?
|
Toshiba Semiconductor
|
| TPCF8101 TPCF810107 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
|
Toshiba Semiconductor
|
| TPC8014 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
|
Toshiba Semiconductor
|
